Dr. Martin Prest: Martin received his PhD from the University of Warwick in 2001 where he studied SiGe MOSFETs, germanium was used to strain the lattice in thin SiGe alloy layers; the layers formed quantum wells in the device with high carrier mobility. He studied carrier mobility at low-temperature and fitted carrier scattering models to measurements. The valence-band offset in SiGe pMOS was shown to reduce 1/f noise. His post-doctoral research at Warwick involved investigation of strained-silicon MOSFETs and Schottky source-drain contacts. He also used tunnel junctions between strained-silicon and superconducting aluminium for electron-cooling below 300 mK and for applications in THz sensors and imaging. At Birmingham University he developed and demonstrated a micro-mechanical actuator for tuning of a superconducting microwave resonator with operation at 77 K. At Cardiff University he developed finite-element models of thermoelectric power convertors, optimising geometry for integration with solar-cells. Since joining CEI in June 2018 Martin has been using Silvaco simulation tools for the development of image sensors.
Development of semiconductor image sensors for space applications. Simulation of CMOS and CCD image sensors to optimise charge collection efficiency.
Simulations and Design of a Single-Photon CMOS Imaging Pixel Using Multiple Non-Destructive Signal Sampling (2020)
Stefanov, Konstantin; Prest, Martin J.; Downing, Mark; George, Elizabeth; Bezawada, Naidu and Holland, Andrew
Sensors, 20, Article 2031(7)